Growth and Electrical Properties of Polymorphs of Mo-Te Crystals

In this study, several polymorphs of Mo-Te (2H-MoTe2, 1T'-MoTe2, and Mo3Te4) single crystals are successfully grown. Mo3Te4 crystals are grown for the first time. The growth mechanism of 2H-MoTe2 and 1T'-MoTe2 crystals is a two-dimensional layer-by-layer mode, whereas that of Mo3Te4 crystals is a three-dimensional mode. The temperature-dependent resistivity of 1T'-MoTe2 and Mo3Te4 follows the metallic behavior, and their magneto resistance (MR) is dependent on the square of the magnetic field. And the MR behavior of Mo3Te4 follows the Kohler's law (< 50 K), strongly suggesting M3Te4 is a simple metal. Different from above two compounds, 2HMoTe(2) exhibits a semiconductor-like resistivity-temperature relationship and a large linear MR. The scale relationship between large mobility and MR suggests that the linear MR originates from disorder effects. The resistivity-temperature behaviors of as-grown crystals are in line with the first-principles calculations. This study reveals the rich structural and electrical properties of the Mo-Te system.

Automated summary

This study successfully grew several polymorphs of Mo-Te single crystals, revealing their growth mechanisms and different electrical properties, showing rich structural and electrical properties.