Journal
MATERIALS LETTERS
Volume 302, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.matlet.2021.130346
Keywords
Gallium oxide; Metastable phases; Ion irradiation; Phase transformations; Radiation-stimulated strain
Funding
- BRICS project - Russian Foundation for Basic Research [195780011]
- President of the Russian Federation fellowship
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The structural changes of polymorphic Ga2O3 layers under Al+ irradiation were investigated using X-ray diffraction, revealing new reflections which can be interpreted in two ways. These ion-stimulated phenomena need to be taken into account when utilizing ion implantation to modify Ga2O3 properties.
Structural changes under the action of Al+ irradiation have been investigated by X-ray diffraction for polymorphic Ga2O3 layers grown by halide vapor phase epitaxy on c-plane sapphire and consisting predominantly of alpha-phase with inclusions of e(x)-phase. As a result of irradiation, some new reflections appear, which can be interpreted in two ways - either as a phase transition of the alpha- and/or e(x)-phase to the more stable 8-phase, or as a selective radiation-stimulated strain of the e(x)-phase, i.e., an increase in the interplanar distance of a family of planes parallel to the surface. The discussed ion-stimulated phenomena have to be taken into account when utilizing ion implantation to modify Ga2O3 properties.
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