Improvement of N-ZnO chemiresistive gas sensor toward lower detection limit of acetone and ethanol at low operating temperature

Nitrogen doped ZnO (N-ZnO) chemiresistive gas sensor was fabricated to improve lower limit of detection (LLOD). N-ZnO was fabricated by mixing ZnO with urea using ball milling method followed by annealing. Both pure ZnO and N-ZnO possess porous morphology. N-ZnO sensor showed a more improved LLOD (20 ppm) toward acetone and ethanol compared to the pure ZnO (LLOD = 1000 ppm) at 150 degrees C which is the lower limit of working temperature for both of the samples. A new understanding on interchangeable n-type and p-type behaviour of NZnO upon exposure to different acetone concentrations was also discussed in this paper.

Automated summary

Nitrogen-doped ZnO (N-ZnO) chemiresistive gas sensor was fabricated to improve the lower limit of detection (LLOD), showing enhanced sensitivity towards acetone and ethanol compared to pure ZnO. The porous morphology was observed in both pure ZnO and N-ZnO. An interchangeable n-type and p-type behavior of N-ZnO upon exposure to different acetone concentrations was discussed.