Journal
MATERIALS LETTERS
Volume 307, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.matlet.2021.131012
Keywords
Composite materials; Semiconductors; Hydrogen evolution; Nickel sulfide; Photocatalysis; Carbon nitride
Funding
- National Natural Science Foundation of China [21872025]
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University [KF1823]
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In this study, binary Ni3S2-NiS2 was grown on g-C3N4 through a hydrothermal method, achieving optimal hydrogen evolution activity. Improved light absorption and superior interfacial charge transfer properties were observed, leading to enhanced photocatalytic performance.
Developing efficient, cheap and robust photocatalysts for hydrogen evolution is promising to solve the issues of energy shortage and environmental degradation. In this work, binary Ni3S2-NiS2 was in-situ grown on g-C3N4 (CN) through a one-pot hydrothermal method. The optimal hydrogen evolution activity (1206.6 mu mol g(-1)h(-1)) was achieved from Ni3S2-NiS2/CN-3 with excellent stability under visible light irradiation. Improved light absorption and superior interfacial charge transfer properties including suppressed photogenerated carrier recombination and efficient separation of photogenerated electron-hole pairs have been observed, which account for the enhanced photocatalytic performance.
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