4.6 Article

Ultrafast broadband nonlinear response of Al-doped Sb2Se3 at near-infrared

Journal

MATERIALS LETTERS
Volume 306, Issue -, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.matlet.2021.130885

Keywords

Optical materials and properties; Sputtering; Al-doped Sb2Se3 nanofilms; Ultrafast broadband response; Near-infrared; Reverse saturation absorption

Funding

  1. Natural Science Foundation of Heilongjiang Province, China [11504072, LH 2019A018]
  2. National Natural Science Foundation of China [11704273]
  3. Natural Science Foundation of Jiangsu Province, China [BK20170375]

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The Al-doped Sb2Se3 nanofilms exhibit broadband nonlinear response and stronger transient absorption intensity. By controlling the Al dopant content, the nonlinear optical properties can be adjusted, making these films suitable for research on broadband nonlinear photonic devices.
The Al-doped Sb2Se3 nanofilms with broadband nonlinear response and stronger transient absorption intensity (Delta OD > 18) were prepared by co-sputtering. The nonlinear optical properties (NOP) are controlled by Al dopant content, and the nonlinear absorption coefficients and refractive index increase 1.5 times and 5 times compared to pure Sb2Se3 nanofilms due to the free carrier absorption (FCA) and free carrier refraction (FCR) caused by the Al dopant. The Al-doped Sb2Se3 nanofilms provide more reference for broadband nonlinear photonic devices.

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