Selective phosphorus doping of polycrystalline silicon on glass using self-assembled monolayer doping (MLD) and flash anneal

We report doping of thin (similar to 60 nm) amorphous silicon (a-Si) on glass substrate to form n + polycrystalline silicon on glass in selective regions using Monolayer doping (MLD) via Flash Lamp Annealing (FLA). The phosphorus monolayer was formed on the exposed regions of SiO2 patterned a-Si, through functionalization with chemically bound Diethyl vinylphosphonate (DVP) dopant molecules. The samples were capped with SiO2 and annealed using a single xenon flash pulse (5.0 J/cm(2), 250 mu s) to simultaneously crystallize a-Si, incorporate and activate phosphorus dopants. SIMS results show an average concentration of 8x10(19) cm(-3) in the 60 nm of thin silicon on glass. Electrical results show a resistivity of similar to 6.60x10(-2) Omega.cm in doped regions. N-channel field effect transistor devices are successfully demonstrated using this MLD-FLA technique.

Automated summary

Doping of thin amorphous silicon on glass substrate was achieved using Monolayer doping via Flash Lamp Annealing, resulting in the formation of n+ polycrystalline silicon in selective regions. The process successfully demonstrated the fabrication of N-channel field effect transistor devices.