Journal
MATERIALS LETTERS
Volume 307, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.matlet.2021.130992
Keywords
Thin films; Electronic materials; ZrB2-Ag composite film; Magnetron sputtering; Near-zero temperature coefficient of resistivity
Funding
- National Natural Science Foundation of China [51862021]
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Nanocrystalline ZrB2-Ag composite films, with Ag nanoparticles as embedded ions, were directly fabricated using DC magnetron co-sputtering. By tailoring the Ag content, it was found that low resistivity and near-zero temperature drift composite films can be obtained. This provides a promising approach for developing sophisticated thin-film resistors with a broader temperature range.
Nanocrystalline ZrB2-Ag composite films, which utilize Ag nanoparticles as embedded ions, were directly fabricated via the direct current magnetron co-sputtering technique. Keithley Hall Measuring Instrument allowed insight into the physical features in the temperature of 77 K to 373 K. Ag-containing composite film led to resistivity for composite films descended exponentially rather than linearly, however also resulting in the temperature coefficient of resistivity (TCR) values varied from negative to positive. Both comparable lower resistivity (114.9 mu S2 center dot cm) and even near-zero TCR77-373 K at 3 ppm center dot K-1 indicated that low resistivity and nearzero temperature drift ZrB2-Ag composite film can be obtained by tailoring the Ag content. Moreover, this provides a promising approach to develop sophisticated thin-film resistors (TFR) materials below and above ambient temperature with a broader temperature range.
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