Resistive switching of transition metal ferrites on silicon substrate

This letter reports on the development and characterization of ferrite based resistive switching devices that join the excellent multifunctional memory properties of ferrites and silicon processing technologies. The core of the resistive switching devices consists of a single transition metal ferrite (Co, Cu, Ni, and Zn) confirmed through energy dispersive x-ray spectroscopy and x-ray diffraction. The ferrites are spin coated onto processed silicon dies (acting as bottom electrode/substrate) and deposited with a silver top electrode. Both electrodes are active, providing additional charge carriers to the main redox reaction mechanism (found in ferrites), thus helping device stability. Characterization and analysis of the ferrite-silicon devices show low resistive state ohmic conduction as well as the non-linear conducting mechanisms (Schottky Emission and Poole Frenkel) found in previously reported ferrite resistive switching devices. An additional reaction mechanism (space charge limited current) was found that is attributed to the active electrodes through the influx of excess charge carriers.

Automated summary

This research reports on the development and characterization of ferrite based resistive switching devices, combining the excellent multifunctional memory properties of ferrites and silicon processing technologies. The devices consist of single transition metal ferrites (Co, Cu, Ni, and Zn) confirmed through spectroscopy and X-ray diffraction. Characterization shows low resistive state ohmic conduction and additional non-linear conducting mechanisms, with active electrodes contributing to device stability.