4.6 Article

Compositional dependence of structural, physical, and, in particular, optical parameters of Se50-xTe30Sn20Sbx chalcogenide glassy systems

Journal

MATERIALS CHEMISTRY AND PHYSICS
Volume 274, Issue -, Pages -

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.matchemphys.2021.125153

Keywords

Quaternary chalcogenides; Topological assessment; Chemical bond approach; Optical bandgap energy; VB and CB potential

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This paper investigates the compositional dependency on physical, structural, and optical properties of chalcogenide bulk glassy systems synthesized via the melt quenching method. Optical bandgap energy decreases as Sb content increases, while bond distribution within the glassy network is studied and discussed. The Mean bond energy and cohesive energy of the glassy systems have also been estimated and discussed.
Through this paper, we describe the compositional dependency on physical, structural and optical properties of Se50-xTe30Sn20Sbx (x = 2, 4, 6, and 8) chalcogenide bulk glassy systems, synthesized via the melt quenching method. X-ray diffraction patterns of all the samples conspicuously confirm the formation of the amorphous structure. Various structural parameters like density, molar volume, compactness, atomic density and other associated parameters have been evaluated and the effect of Sb incorporation within the network has been discussed. The studied glass is rigidly connected, as suggested by the gradual increment in the values of estimated average coordination. Tauc's extrapolation method has been employed to determine optical bandgap energy from UV-Vis spectroscopic data, which reveal that optical bandgap energy decreases as Sb content increases. The bond distribution within the glassy network has been studied and discussed. The Mean bond energy and cohesive energy of the glassy systems have been estimated by using the chemical bond approach (CBA). The glass tran-sition temperature varies with composition. The position of the valence band edge and conduction band edge has been determined to inspect the applicability of the as-prepared samples in designing semiconductor devices.

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