Journal
MATERIALS CHARACTERIZATION
Volume 180, Issue -, Pages -Publisher
ELSEVIER SCIENCE INC
DOI: 10.1016/j.matchar.2021.111381
Keywords
Abnormal grain growth; Grain-oriented electrical steel; Size advantage; Pinning force; Goss orientation
Categories
Funding
- Fundamental Research Program of the Korea Institute of Materials Science [PNK7760]
- National Research Council of Science & Technology (NST), Republic of Korea [PNK7760] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The study examined the crystallographic orientation, grain size, and distribution of grain boundary characteristics in Si steel sheets to identify preferential sites for abnormal grain growth of Goss-oriented grains. It was found that grains with exact Goss orientation in the subsurface region had larger size and more high angle grain boundaries, contributing to abnormal grain growth. Conversely, grains with deviated Goss orientation in the central region also exhibited larger size and more high angle grain boundaries. This suggests that the high Goss selectivity is linked to the position of nuclei and favorable conditions for abnormal grain growth in the subsurface region.
In this study, the differences in the crystallographic orientation, grain size, and grain boundary characteristic distribution along the sheet thickness in Si steel sheets were investigated in order to evaluate preferential sites for the abnormal grain growth of Goss-oriented grains. The grains having exact Goss orientation in the subsurface region of the primary recrystallized Si steel sheets had larger grain size, higher fraction, and higher frequencies of HEGBs and sigma 9 GBs, which are claimed to be beneficial to the occurrence of the abnormal grain growth than the grains in the central region. On the other hand, the grains having deviated Goss orientation in the central region had larger grain size and higher sigma 9 GBs than the grains having same orientation in the subsurface region. Therefore, it is considered that the high Goss selectivity is peculiar to the position of the nuclei and the beneficial conditions for the abnormal grain growth of exact Goss-orientated grains in the subsurface region.
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