4.5 Article

Preparation of Bio-Based Polybenzoxazine/Pyrogallol/Polyhedral Oligomeric Silsesquioxane Nanocomposites: Low Dielectric Constant and Low Curing Temperature

Journal

MACROMOLECULAR MATERIALS AND ENGINEERING
Volume 307, Issue 3, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/mame.202100747

Keywords

bio-based benzoxazine; curing temperature; dielectric properties; nanocomposites; polyhedral oligomeric silsesquioxane

Funding

  1. National Natural Science Foundation of China [21776080]
  2. Innovation Program of Shanghai Municipal Education Commission [2019-01-07-00-02-E00061]
  3. Shanghai Municipal Science and Technology Commission [21520761100]

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In this study, a bio-based benzoxazine monomer was synthesized using a solvent-free method and pyrogallol was used as a curing catalyst. The resulting PC-s/py/POSS nanocomposites showed good thermal stability and water resistance, as well as low curing temperature and dielectric constant, making them promising for low dielectric applications in microelectronic materials.
In this work, a bio-based benzoxazine monomer (C-s) is synthesized from cardanol, stearylamine, and paraformaldehyde through solvent-free method. Pyrogallol is used as a curing catalyst for the ring-opening polymerization of benzoxazine. Differential scanning calorimeter (DSC) results reveal that doping with pyrogallol reduces the exothermic peak temperature (T-p) of C-s from 256 to 174 degrees C. The polybenzoxazine/pyrogallol/polyhedral oligomeric silsesquioxane (PC-s/py/POSS) nanocomposites are prepared via thermal curing. The doping of aminopropyl isobutyl POSS (POSS-NH2) can reduce the dielectric constant of polybenzoxazine. The dielectric constant of PC-s/py/POSS is 2.64 at 1 MHz when the doping amount of POSS-NH2 is 10 wt%. The results of thermogravimetric analysis (TGA) and water absorption test indicate that the PC-s/py/POSS nanocomposites possess good thermal stability and water resistance. In summary, the PC-s/py/POSS nanocomposites with low curing temperature and low dielectric constant are expected to be applied to the low dielectric materials for microelectronic applications.

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