Optical properties of La1-xSrxVO3 (0 ≤ x ≤ 1) films grown on LSAT substrates using radio frequency sputtering deposition

La1-xSrxVO3 (0 & LE; x & LE; 1) films can be transparent conducting oxides such as n-type SrVO3 and p-type La2/3Sr1/3VO3 films. They also show a semiconductor-to-metal transition (SMT) near x = 0.2. The optical and electrical properties of La1-xSrxVO3 (0 & LE; x & LE; 1) films grown on (LaAlO3)(0.3)(Sr2AlTaO6)(0.7) (LSAT) substrates using RF sputtering deposition were investigated. Resistivities of La1-xSrxVO3 showed SMT near x = 0.2. La1-xSrxVO3 films grown on LSAT substrates were found to have high crystallinity using theta-2 theta scan and grazing incidence x-ray diffraction measurements. Dielectric functions of La1-xSrxVO3 films were measured using spectroscopic ellipsometry. The evolution of optical spectra of La1-xSrxVO3 films from LaVO3 to SrVO3 was compared to the electronic band structures as a function of Sr composition, which was either experimentally observed or theoretically calculated in the literature. With increasing Sr composition, the interband transition energies of O 2p to V 3d states near 4 eV changed linearly as a function of Sr content.

Automated summary

The optical and electrical properties of La1-xSrxVO3 films grown on LSAT substrates were investigated. The films showed a semiconductor-to-metal transition near x = 0.2 and had high crystallinity. The interband transition energies of O 2p to V 3d states changed linearly with increasing Sr content.