Betavoltaic cell based on Ni/β-Ga2O3 and 63Ni source

The parameters of betavoltaic cells based on a Ni/beta-Ga2O3 Schottky barrier diode and beta-particle source containing Ni-63 are evaluated. Monte Carlo simulation is used to calculate the depth-dependent generation rate of excess carriers produced by beta-radiation from Ni-63 source. It is shown that the dependence can be described by the exponential function exp(-z/z(0)) with z(0) equal to 1.3 mu m. The short circuit current, open circuit voltage, and maximum power are calculated for the Schottky barrier with parameters obtained from the electron beam induced current studies of Ni Schottky barriers formed on n-type beta-Ga2O3.

Automated summary

The parameters of betavoltaic cells based on a Ni/beta-Ga2O3 Schottky barrier diode and beta-particle source containing Ni-63 are evaluated. The depth-dependent generation rate of excess carriers produced by beta-radiation from Ni-63 source is calculated using Monte Carlo simulation, and it is found that the dependence can be described by an exponential function.