Simultaneously improving the electrical properties and long-term stability of ZnO varistor ceramics by reversely manipulating intrinsic point defects

Excellent electrical properties and the improved long-term stability of ZnO varistor ceramics were simultaneously achieved by doping NiO. The microstructural features were investigated using X-ray diffractometer, scanning electron microscopy, and energy dispersive spectroscopy, while the intrinsic point defects were characterized using frequency domain dielectric spectroscopy and verified by photoluminescence and Raman spectra. The results indicated that in the ZnO varistor ceramics, a reverse manipulation of donor point defects, i.e., suppressing mobile zinc interstitial but increasing stable oxygen vacancy, was achieved. The long-term stability of NiO-doped ZnO ceramics was improved via a decrease in zinc interstitial density, with a degradation rate of 0.064 mu A cm(-2) h(-0.5). Meanwhile, due to an increase in oxygen vacancy density, the excellent nonlinear current-voltage performance, i.e., a high nonlinear coefficient (72.9), low leakage current density (0.08 mu A cm(-2)), and low grain resistivity (13.43 x 10(-3) Omega m), was maintained. The findings of this study provide a possible method for developing high-performance ZnO varistor ceramics by manipulating point defects.

Automated summary

Doping NiO in ZnO varistor ceramics can improve their electrical properties and long-term stability simultaneously. This improvement is achieved by manipulating point defects to reduce zinc interstitial density and increase oxygen vacancy density.