4.8 Article

Spine Surgery of Perylene Diimides with Covalent B-N Bonds toward Electron-Deficient BN-Embedded Polycyclic Aromatic Hydrocarbons

Journal

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 144, Issue 7, Pages 3091-3098

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/jacs.1c11782

Keywords

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Funding

  1. National Key R&D Program of China [2017YFA0204701]
  2. National Natural Science Foundation of China [22071007, 21790360, 21722201, 22020102001]
  3. Office of China Postdoc Council (OCPC)

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The facile synthesis of novel perylene diimide derivatives (B2N2-PDIs) with unique optoelectronic properties, featuring n-type B-N covalent bonds, has been successfully achieved. The introduction of BN units significantly modifies the photophysical and electronic properties of these B2N2-PDIs, demonstrating their potential application in optoelectronic materials.
BN-embedded polycyclic aromatic hydrocarbons (PAHs) with unique optoelectronic properties are underdeveloped relative to their carbonaceous counterparts due to the lack of suitable and facile synthetic methods. Moreover, the dearth of electron-deficient BN-embedded PAHs further hinders their application in organic electronics. Here we present the first facile synthesis of novel perylene diimide derivatives (B2N2-PDIs) featuring n-type B-N covalent bonds. The structures of these compounds are fully confirmed through the detailed characterizations with NMR, MS, and X-ray crystallography. Further investigation shows that the introduction of BN units significantly modifies the photophysical and electronic properties of these B2N2-PDIs and is further understood with the aid of theoretical calculations. Compared with the parent perylene diimides (PDIs), B2N2-PDIs exhibit deeper highest occupied molecular orbital energy levels, new absorption peaks in the high-energy region, hypsochromic shift of absorption and emission maxima, and decrement of photoluminescent quantum yields. Single-crystal field-effect transistors based on B2N2-PDIs showcase an electron mobility up to 0.35 cm(2) V-1 s(-1), demonstrating their potential application in optoelectronic materials.

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