Improved electrical and optical properties in epitaxial Cd2SnO4 films

Epitaxial Cd2SnO4 films were fabricated on MgO(00l) single crystalline substrates by pulsed laser deposition technique at various substrate temperatures and growth oxygen pressures. The microstructure, transport, and optical properties of the films were studied in detail. High-resolution X-ray diffraction and high-resolution transmission electron microscopy results demonstrate that all the Cd2SnO4 films are grown epitaxially on MgO(00l) substrates. Atomic force microscope images indicate that the films have smooth surface morphologies. Hall-effect measurements reveal that the epitaxial film grown at 680 degrees C and 40 Pa presents the minimum resistivity value of 0.61 m omega cm and maximal Hall mobility of 32.87 cm(2) V-1 s(-1). The metal-semiconductor transitions of Cd2SnO4 films were observed and explained by competitive effects of two conductive mechanisms. The optical transmittance of the Cd2SnO4 films is higher than 75% in the visible and near-infrared range, and the optical bandgap was determined to be about 3.09 eV for the film grown at optimal condition. The band structure and density of states of the Cd2SnO4 were calculated by the density functional theory.

Automated summary

Epitaxial Cd2SnO4 films were successfully grown on MgO(00l) substrates under different conditions, showing low resistivity and high Hall mobility, with optical transmittance above 75% and an optical bandgap of around 3.09 eV. Metal-semiconductor transitions in the films were observed and explained by competitive effects, while the band structure and density of states were calculated using density functional theory.