Journal
JOURNAL OF SOLID STATE CHEMISTRY
Volume 303, Issue -, Pages -Publisher
ACADEMIC PRESS INC ELSEVIER SCIENCE
DOI: 10.1016/j.jssc.2021.122451
Keywords
Y3+ doped ceria; Sintering; Ionic conductivity; Dielectric properties; Scaling
Funding
- Science and Engineering Research Board (SERB) (Govt. of India) [EMR/2017/000325, SR/FTP/PS141-2010]
- Department of Science & Technology and Biotechnology (Govt. of West Bengal) [ST/P/ST/16G-19/2018]
- Department of Science & Technology (DST) (Govt. of India) PURSE Phase 2 programme [SR/PURSE/Phase 2/34]
- University Grants Commission (UGC) (Govt. of India) [F.530/20/CAS-II/2018 (SAP-I)]
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The study investigates the impact of sintering temperature on the structure, ionic conductivity, and dielectric properties of Ce0.8Y0.2O1.9. Conductivity and activation energy vary with sintering temperature, with highest and lowest values observed at 800 degrees C. Samples sintered at high temperatures exhibit lower conductivity and higher activation energy due to stable defect formation.
This study investigates the effect of sintering temperature on structure, ionic conductivity, and dielectric properties of Ce0.8Y0.2O1.9. The lattice parameter, crystallite size, and relative density increase with the sintering temperature. The conductivity and activation energy also has been observed to vary with sintering temperature and show the highest and lowest value respectively at a sintering temperature of 800 degrees C. Grain boundary thickness exhibits an enlarged value at both low and high sintering temperatures. The samples sintered at high-temperature exhibit lower conductivity and higher activation energy due to the formation of stable defect associates. Sintering temperature affects the dielectric constant of the system. Havriliak-Negami (HN) formalism is used to investigate the effect of sintering temperature on different parameters of dielectric and modulus spectra. Scaling spectra confirms that the conduction, relaxation and reorientation mechanism are sintering temperature independent.
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