Journal
JOURNAL OF RUSSIAN LASER RESEARCH
Volume 42, Issue 6, Pages 721-729Publisher
SPRINGER
DOI: 10.1007/s10946-021-10014-1
Keywords
hyper-Raman scattering; exciton; semiconductor
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In this theoretical study, resonant hyper-Raman scattering of light by LO-phonons in a CdS crystal with wurtzite structure was investigated, taking into account the influence of the complex valence band on the lowest exciton state using perturbation theory. The scattering processes involving two-photon transitions to s- and p-excitons of the A series were considered. It was shown that possible dipole transitions between sub-bands lead to additional scattering mechanisms that can affect the frequency dependence of the cross section.
We theoretically study the resonant hyper-Raman scattering of light by LO-phonons in a CdS crystal with the wurtzite structure, taking into account the influence of the complex valence band on the lowest exciton state by the use of the of the perturbation theory. The scattering processes including the two-photon transitions to s- and p-excitons of the A series are considered. We show that the assumption of the possible dipole transitions between the sub-bands leads to additional scattering mechanisms, which can in some cases have a noticeable effect on the frequency dependence of the cross section.
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