4.6 Article

Temperature dependence and functionalization of solution processed high-k hybrid gate insulators for high performance oxide thin-film transistors

Related references

Note: Only part of the references are listed.
Article Physics, Applied

Hydrogenated In-Ga-Zn-O thin-film transistors with anodized and fluorinated Al2O3 gate insulator for flexible devices

Syuya Kono et al.

Summary: The addition of fluorine into hydrogenated IGZO TFTs can significantly improve the performance and reliability of the TFTs, increasing field effect mobility and positive gate bias and temperature stress reliability.

JAPANESE JOURNAL OF APPLIED PHYSICS (2021)

Article Chemistry, Physical

Efficient generation of singlet oxygen by perylene diimide photosensitizers covalently bound to conjugate polymers

Agata Blacha-Grzechnik et al.

JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY (2020)

Article Engineering, Electrical & Electronic

High-Performance Fully Solution-Processed Oxide Thin-Film Transistors via Photo-Assisted Role Tuning of InZnO

Dianne C. Corsino et al.

ACS APPLIED ELECTRONIC MATERIALS (2020)

Article Engineering, Electrical & Electronic

Solution-Processed La Alloyed ZrOx High-k Dielectric for High-Performance ZnO Thin-Film Transistors

Md Mobaidul Islam et al.

IEEE ELECTRON DEVICE LETTERS (2020)

Article Materials Science, Multidisciplinary

High Performance Amorphous In-Ga-Zn-O Thin-Film Transistors with Low Temperature High-k Solution Processed Hybrid Gate Insulator

Ployrung Kesorn et al.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2020)

Review Chemistry, Multidisciplinary

Solution Processed Metal Oxide High-kappa Dielectrics for Emerging Transistors and Circuits

Ao Liu et al.

ADVANCED MATERIALS (2018)

Review Chemistry, Multidisciplinary

High-k Gate Dielectrics for Emerging Flexible and Stretchable Electronics

Binghao Wang et al.

CHEMICAL REVIEWS (2018)

Article Engineering, Electrical & Electronic

Remarkable Increase in Field Effect Mobility of Amorphous IZTO Thin-Film Transistors With Purified ZrOx Gate Insulator

Ravindra Naik Bukke et al.

IEEE ELECTRON DEVICE LETTERS (2018)

Article Materials Science, Multidisciplinary

Low-temperature fabrication of solution-processed hafnium oxide gate insulator films using a thermally purified solution process

Jusung Chung et al.

JOURNAL OF MATERIALS CHEMISTRY C (2018)

Article Nanoscience & Nanotechnology

High performance top gate a-IGZO TFT utilizing siloxane hybrid material as a gate insulator

Chaiyanan Kulchaisit et al.

AIP ADVANCES (2018)

Article Engineering, Electrical & Electronic

The electrical performance and gate bias stability of an amorphous InGaZnO thin-film transistor with HfO2 high-k dielectrics

Ruo Zheng Wang et al.

SOLID-STATE ELECTRONICS (2017)

Article Engineering, Electrical & Electronic

Anomalous Increase in Field-Effect Mobility in In-Ga-Zn-O Thin-Film Transistors Caused by Dry-Etching Damage Through Etch-Stop Layer

Daichi Koretomo et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2016)

Article Materials Science, Multidisciplinary

Effect of Fluorine in a Gate Insulator on the Reliability of Indium-Gallium-Zinc Oxide Thin-Film Transistors

Haruka Yamazaki et al.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2016)

Article Materials Science, Multidisciplinary

Hysteresis of Transistor Characteristics of Amorphous IGZO TFTs Studied by Controlling Measurement Speed

Yi-Jung Chen et al.

ECS SOLID STATE LETTERS (2015)

Article Materials Science, Multidisciplinary

Improved performance of InGaZnO thin-film transistors with Ta2O5/Al2O3 stack deposited using pulsed laser deposition

G. Z. Geng et al.

CURRENT APPLIED PHYSICS (2014)

Article Materials Science, Multidisciplinary

The role of solution-processed high-κ gate dielectrics in electrical performance of oxide thin-film transistors

Wangying Xu et al.

JOURNAL OF MATERIALS CHEMISTRY C (2014)

Article Chemistry, Multidisciplinary

UV-Assisted Low Temperature Oxide Dielectric Films for TFT Applications

Jaeeun Hwang et al.

ADVANCED MATERIALS INTERFACES (2014)

Article Engineering, Electrical & Electronic

Thin film high dielectric constant metal oxides prepared by reactive sputtering

Steven W. Wright et al.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2012)

Article Engineering, Electrical & Electronic

High-Performance a-IGZO TFT With ZrO2 Gate Dielectric Fabricated at Room Temperature

Jae Sang Lee et al.

IEEE ELECTRON DEVICE LETTERS (2010)

Article Chemistry, Physical

Room temperature fabrication Oxide TFT with Y2O3 as a gate oxide and Mo contact

Santosh M. Bobade et al.

APPLIED SURFACE SCIENCE (2009)

Article Electrochemistry

Characteristics and Cleaning of Dry-Etching-Damaged Layer of Amorphous Oxide Thin-Film Transistor

Chang-Jung Kim et al.

ELECTROCHEMICAL AND SOLID STATE LETTERS (2009)

Article Engineering, Electrical & Electronic

Contribution of photoacid generator to material roughness

Theodore H. Fedynyshyn et al.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2006)