Temperature dependence and functionalization of solution processed high-k hybrid gate insulators for high performance oxide thin-film transistors

We demonstrate a solution processed gate insulator (GI) with high dielectric constant (high-k) of up to similar to 8.9 for high performance and low voltage operation amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). High mobilities of up to similar to 30 cm(2) V s(-1), threshold voltage of <0.5 V, and low off current (similar to 10(-12) A) can be achieved through the combination of high-k BaTiO (x) (BTO) nanoparticles and a polysiloxane (PSX) polymer matrix. This combination enables a lower process temperature of 300 degrees C from 650 degrees C while ensuring enhanced performance and low gate leakage current. We also show the tunability of the high-k hybrid BTO/PSX through fluorination and addition of a photosensitive property to further reduce the leakage current and inhibit dry etching related degradation. High-k hybrid BTO/PSX GI is a promising candidate for high performance and low-voltage operation oxide TFTs.

Automated summary

We demonstrate a solution processed gate insulator with high dielectric constant for high performance and low voltage operation amorphous InGaZnO thin-film transistors. By combining high-k nanoparticles and a polymer matrix, high mobility and low off current can be achieved, and the process temperature can be reduced. The tunability of the gate insulator and further reduction of leakage current are also shown.