Synergistic effects in MOS capacitors with an Au/HfO2-SiO2/Si structure irradiated with neutron and gamma ray

The properties of oxide trapped charges and interface state density in the metal oxide semiconductor (MOS) capacitors with an Au/HfO2-SiO2/Si structure were investigated under irradiation of 14 MeV neutron and Co-60 gamma-ray. In the mixed neutron and gamma irradiation environment, the formation of the oxide trapped charges in the HfO2-SiO2 layer is determined by the total deposited ionization energy, i.e. the sum of ionization energy deposition of the neutrons and the accompanying gamma rays, while the influence of the displacement damage caused by 14 MeV neutrons can be ignored. The interface state density depends not only on the ionizing energy loss (IEL) but also the non-IEL (NIEL), and NIEL plays a major role below the critical neutron fluence of 4.5 x 10(12) n cm(-2). The synergistic effect of the interface state is observed increases with energy deposition in the oxide at lower fluences, while decreasing above the critical fluence. These results confirm the existence of the synergistic effect of neutron and gamma irradiation in damaging HfO2 MOS devices.

Automated summary

This study investigated the properties of oxide trapped charges and interface state density in MOS capacitors with an Au/HfO2-SiO2/Si structure under irradiation of 14 MeV neutron and Co-60 gamma-ray. It was found that the formation of oxide trapped charges depends on the total deposited ionization energy, while the displacement damage caused by 14 MeV neutrons can be ignored. The interface state density depends not only on the ionizing energy loss but also the non-ionizing energy loss, with the latter playing a major role at lower neutron fluence. The results also confirm the importance of the synergistic effect of neutron and gamma irradiation in damaging HfO2 MOS devices.