Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 55, Issue 10, Pages -Publisher
IOP Publishing Ltd
DOI: 10.1088/1361-6463/ac3bf4
Keywords
negative differential resistance; threshold switching; niobium oxide; volatile memristor; core-shell model; oscillator; neuromorphic computing
Categories
Funding
- National Natural Science Foundation of China [11674241, 11774253]
- Natural Science Foundation of Tianjin City [18JCYBJC18000]
- Australian Research Council (ARC) Linkage Project [LP150100693]
- Varian Semiconductor Equipment/Applied Materials
- Australian Research Council [LP150100693] Funding Source: Australian Research Council
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A systematic analysis of negative differential resistance (NDR) modes in volatile memristors was conducted using a two-zone parallel model. The results identified the origin of different NDR responses and provided a strong basis for designing devices with complex NDR characteristics.
Volatile memristors, or threshold switching devices, exhibit a diverse range of negative differential resistance (NDR) characteristics under current-controlled operation and understanding the origin of these responses is of great importance for exploring their potential as nano-scale oscillators for neuromorphic computing. Here we use a previously developed two-zone, parallel memristor model to undertake a systematic analysis of NDR modes in two-terminal metal-oxide-metal devices. The model assumes that the non-uniform current distribution associated with filamentary conduction can be represented by a high current density core and a lower current-density shell where the core is assumed to have a memristive response due to Poole-Frenkel conduction and the shell is represented by either a fixed resistor or a second memristive region. A detailed analysis of the electrical circuits is undertaken using a lumped-element thermal model of the core-shell structure, and is shown to reproduce continuous and discontinuous NDR responses, as well as more complex compound behaviour. Finally, an interesting double-window oscillation behaviour is predicted and experimentally verified for a device with compound NDR behaviour. These results clearly identify the origin of different NDR responses and provide a strong basis for designing devices with complex NDR characteristics.
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