Enhanced field emission performance of Si nanopillars coated with LaB6 hats fabricated by microspheres lithography

LaB6 nanofilm is coated on the top surface of silicon nanopillars forming a field emission array (FEA). Such a structure will be referred to subsequently as a 'LaB6 hat-coated Si-FEA'. The electron emission mechanism of the LaB6 hat-coated Si-FEA is analyzed by OPERA simulation software. It reveals that the electron emission mainly depends on the LaB6 film edge. Moreover, the LaB6 hat-coated Si-FEA sample is prepared by microsphere lithography, and the field emission properties are tested. The results show that when the anode voltage is 850 V, the field emission current density reaches 458 mA cm(-2), which is in good agreement with the simulation results. This work demonstrates that the field emission cathodes with low cost, high integration and high current can be realized by using LaB6 as emitter material combined with microsphere lithography technology.

Automated summary

In this study, a LaB6 nanofilm is coated on the top surface of silicon nanopillars, creating a structure called a LaB6 hat-coated Si-FEA. The electron emission mechanism of this structure is analyzed using OPERA simulation software, which reveals the importance of LaB6 film edge in electron emission. Experimental results of a LaB6 hat-coated Si-FEA sample prepared using microsphere lithography show good agreement with the simulation results, indicating the potential for low-cost, highly integrated, and high-current field emission cathodes by utilizing LaB6 as an emitter material with microsphere lithography technology.