Journal
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
Volume 12, Issue 48, Pages 11673-11682Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpclett.1c03408
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Funding
- Fundamental Research Funds for the National Key Research and Development Program of China [2018YFB2200500]
- National Natural Science Foundation of China [61975023, 51775070, 22072010, 61875211]
- Chongqing Research Program of Basic Research and Frontier Technology [cstc2019jcyj-msxmX0040]
- Fundamental Research Funds for Central Universities of China [2021CDJXXXB003]
- Open Fund of the State Key Laboratory of High Field Laser Physics (Shanghai Institute of Optics and Fine Mechanics)
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This Perspective provides a condensed overview of halide perovskite RRAMs, including materials, device performance, switching mechanism, and potential applications. The challenges of halide perovskite films, device fabrication, memory performance reliability, and understanding of switching mechanism are discussed, along with potential paths for future research.
Resistive switching random access memory (RRAM), also known as memristor, is regarded as an emerging nonvolatile memory and computing-in-memory technology to address the intrinsic physical limitations of conventional memory and the bottleneck of von Neumann architecture. In particular, halide perovskite RRAMs have attracted widespread attention in recent years because of their ionic migration nature and excellent photoelectric properties. This Perspective first provides a condensed overview of halide perovskite RRAMs based on materials, device performance, switching mechanism, and potential applications. Moreover, this Perspective attempts to detail the challenges, such as the quality of halide perovskite films, the compatible processing of device fabrication, the reliability of memory performance, and clarification of the switching mechanism, and further discusses how the outstanding challenges of halide perovskite RRAMs could be met in future research.
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