4.8 Article

Perovskite-Type 2D Materials for High-Performance Photodetectors

Journal

JOURNAL OF PHYSICAL CHEMISTRY LETTERS
Volume 13, Issue 5, Pages 1215-1225

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.jpclett.1c04225

Keywords

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Funding

  1. National Key RAMP
  2. D Program of China [2018YFA0703700]
  3. National Natural Science Foundation of China [12061131009, 51872050]
  4. Science and Technology Commission of Shanghai Municipal-ity [21520712600, 19520744300]

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Perovskite-type 2D materials show great potential for advanced photodetectors with tunable absorption property, enhanced carrier separation, and versatile band engineering. By reducing thickness and utilizing specific growth strategies and device engineering, superior performance photodetectors can be achieved in the field of optoelectronic devices.
Photodetectors are light sensors in widespread use in image sensing, optical communication, and consumer electronics. In current smart optoelectronic technology, conventional semiconductors have encountered a bottleneck caused by inflexibility and opacity. With the ever-increasing demands for versatile optoelectronic applications, perovskitetype 2D materials demonstrate great potential for advanced photodetectors inspired by molecularly thin 2D materials. Through the reduction of thickness to thin or molecularly thin levels, single-crystalline 2D perovskites can exhibit superior optoelectronic performance characteristics, such as tunable absorption property by chemical design, enhanced carrier separation by remarkable photosensing capability, and improved carrier extraction by versatile band engineering. More importantly, perovskite-type 2D materials exhibit great potential for large-scale monolithic integration to achieve all-in-one sensing-memory-computing optoelectronic devices. In this Perspective, recent progress in 2D perovskite-based photodetectors is presented in detail. The focus is on growth strategies for reducing thickness, thickness-dependent optical and electrical properties, device engineering, heterojunction fabrication, and device performance. Finally, the current challenges and future prospects in this field are presented.

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