Journal
JOURNAL OF PHYSICAL CHEMISTRY C
Volume 126, Issue 8, Pages 4229-4240Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpcc.2c00009
Keywords
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Funding
- Scientific and Technological Research Council of Turkey (TUBITAK) [118C243]
- TUBITAK NANOSIS platform [1004]
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Transition-metal-doped ZnO is a potential dilute magnetic semiconductor for spintronic applications. This report presents the synthesis of manganese-doped ZnO using a microwave-assisted hydrolysis technique, and investigates the defect structure via electron paramagnetic resonance and photoluminescence techniques, revealing that Mn2+ dominates the intrinsic defect species in ZnO.
Dilute magnetic semiconductors such as transitionmetal-doped ZnO are potential candidates for spintronic applications. Transition metals such as Mn, Fe, and Cu when doped in ZnO enable spin magnetic properties to conventional semiconductors. Although several techniques such as wet chemical and vapor deposition methods are employed to achieve homogeneous doping in ZnO, these methods have limits pertaining to solubility levels of dopant ion, morphology, competition between intrinsic and extrinsic defects and localization of the defect species. This manuscript is an addition to the vast knowledge of methods and protocols that present the synthesis of transition-metal-doped ZnO. In this report, manganese-doped ZnO is synthesized via a microwave-assisted hydrolysis technique. The defect structure of Mn-doped ZnO wires is investigated via electron paramagnetic resonance and photoluminescence techniques. The analysis indicates that Mn2+ substitutes the Zn ion and dominates the intrinsic defect species in ZnO.
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