4.7 Article

Atomistic simulations of helium behavior at the Cu(111)/W(110) interface

Journal

JOURNAL OF NUCLEAR MATERIALS
Volume 555, Issue -, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.jnucmat.2021.153157

Keywords

Copper; Tungsten; Helium; Interface; Atomistic simulation

Funding

  1. National Natural Science Foun-dation of China [11775151]

Ask authors/readers for more resources

Helium atoms are easily trapped at the copper/tungsten interface, forming larger helium bubbles and increasing helium concentration.
Atomistic simulations including molecular dynamics and static simulations were conducted to investigate helium (He) behavior at the copper (111)/tungsten (110) (Cu(111)/W(110)) interface. Single He atoms are found to be trapped and aggregate between the first and second Cu monolayers along the interface, which acts thus as a defect sink, and tend to distribute along FCC/HCP Cu zones. Based on the calculation of the migration barrier and formation energy of interstitial He atoms, the sink traps He atoms from both sides, especially from the W layer. Once the He atoms are trapped in the sink at low temperatures, few could escape, which increases the He concentration and promotes the formation of larger He bubbles in the sink. (c) 2021 Elsevier B.V. All rights reserved.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.7
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available