Journal
JOURNAL OF NON-CRYSTALLINE SOLIDS
Volume 574, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.jnoncrysol.2021.121166
Keywords
Amorphous silicon; Crystalline silicon; Surface passivation; SHJ solar cells; PECVD
Funding
- Department of Science and Technology (DST)
- MeitY of Govt. of India under the Nano-electronics Network for Research and Application (NNetRA) research project [RP03530]
Ask authors/readers for more resources
Amorphous/crystalline silicon heterojunction (SHJ) solar cells are known for their high VOC potential, good bifaciality, simple fabrication process, and low thermal-budget manufacturing. Despite their high efficiency, achieving exceptional passivation and efficiency remains a challenge for researchers.
Amorphous/crystalline silicon heterojunction (SHJ) solar cells are well known for their inherent high opencircuit voltage (VOC) potential, much better temperature coefficient, higher bifaciality, a simpler fabrication process, and low thermal-budget manufacturing. Near-perfect passivation of the silicon surfaces by a few nanometers thin layers of undoped hydrogenated amorphous silicon (i-a-Si:H), forms the basis of SHJ solar cells resulting in VOC well above 720 mV. The front emitter and the back surface field are formed by low-temperature deposition of slightly thicker doped a-Si:H(p or n) layers, eliminating the necessity of high-temperature dopantdiffusion and complexity of local metal contact formation to the silicon wafer. As the photovoltaic electricity is set for terawatt-scale deployment, new investors are now considering high-volume manufacturing of the highefficiency SHJ solar cells, which currently offers the highest module efficiency among the c-Si PV technology. It should be noted that despite the seemingly simple cell structure and lean processing, it has been a challenging task for the researchers to realise the formation of exceptionally well-passivated a-Si:H/c-Si interfaces and SHJ cells with high VOC and efficiency. This paper presents a review of the progress in developing i-a-Si:H films, from transition-zone to underdense layers, and bilayers for interface passivation of SHJ solar cells.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available