Journal
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
Volume 31, Issue 2, Pages 217-225Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JMEMS.2022.3143354
Keywords
Lithium niobate; thin films; bulk acoustic resonator (BAW); A1 mode; shear wave; Lamb wave; 5 GHz; 5G application; large bandwidth; electromechanical coupling; k(t)(2); acoustic filters; microfabrication; RF MEMS
Categories
Funding
- InnosuisseSchweizerische Agentur fur Innovationsforderung [ING-33030.1]
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This study presents in-depth simulation and measurement results of laterally excited shear bulk acoustic resonators (XBAR) in Lithium Niobate at 5 GHz, with high electromechanical coupling factor and impedance close to 2 Ohms. The loaded quality factors at resonance and anti-resonance are found to be 340 and 150, respectively. The study also investigates the impact of geometric parameters on the resonator performance to improve its figure of merits (FoM) for 5G filter applications.
This work presents an in-depth study of simulation and measurement results of laterally excited shear bulk acoustic resonators (XBAR) in Lithium Niobate, at 5 GHz with high electromechanical coupling factor (k(t)(2)) as high as 25%, and with impedances at resonance close to 2 Omega. Loaded Quality factors of up to 340 and 150 are obtained at resonance and anti-resonance, respectively. Experimental00 dispersion behaviors of main mode and spurious are presented. Several geometric parameters affecting resonator performance are studied in order to improve figure of merits (FoM) of the device for 5G filter applications. The modified fabrication process presented shows a high yield of over 90% of devices which can be scalable for mass production of high frequency, sub-6 GHz, wide band filters.
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