Fabrication of cupric oxide-based transistors by a sol-gel technique using a binary solvent mixture

The sol-gel technology has been envisioned as a low-cost alternative for the fabrication of metal oxide layers for electronic applications. However, this approach requires solvents with a high dielectric constant and boiling point to achieve precursor high solubility and high-quality films, respectively. Since no solvent satisfies all conditions, the binary solvent mixture is proposed as an alternative. Here we report the control of cupric oxide films' structure and electrical properties for field-effect transistor application through variation of the solvent ratio of a binary solvent mixture. The optimum mix of isopropyl alcohol and 2-methoxyethanol ratio 1:3 provides the highest charge mobility due to film structure.

Automated summary

The sol-gel technology is a low-cost alternative for metal oxide film fabrication. The structure and electrical properties of cupric oxide films for field-effect transistor application can be controlled by varying the solvent ratio of a binary solvent mixture.