Structure, morphology and I-V characteristics of thermally evaporated LaAlO3 nanostructured thin films

Nanostructured perovskite LaAlO3 thin films with thickness of 50 nm, 100 nm, and 150 nm were prepared using thermal evaporation technique. The Fourier transform infrared spectroscopy study reveals the presence of La-Al-O bond. X-ray diffraction pattern confirms the perovskite LaAlO3 structure. Scanning electron microscope images show the uniform furry structured rods, mixed rods/cubes and flower structured morphology. The presence of elements like La, Al, and O was confirmed from the energy-dispersive X-ray spectroscopy. Current-voltage (I-V) characteristics of Al/LaAlO3/Al sandwich capacitor structure show the existence of Poole-Frenkel type conduction mechanism with low leakage current (0.75 x 10(-7) to 1.5 x 10(-7) A/cm(2)), low activation energy (2.59 to 0.21 eV) and decrease in potential barrier with an increase in the electric field. The acquired results indicated that the prepared LaAlO3 nanothin film could be captivated with utilization as a dielectric layer in various electronic devices in the future.

Automated summary

Nanostructured LaAlO3 thin films with thicknesses of 50 nm, 100 nm, and 150 nm were successfully prepared using thermal evaporation technique. The films exhibited a La-Al-O bond, perovskite LaAlO3 structure, and promising electrical properties for potential applications in electronic devices in the future.