Scaling behavior of dynamic hysteresis in multiferroic Bi5FeTi3O15 thin films

In this study, Bi5FeTi3O15 (BFTO) thin films were obtained on silicon wafers using a sol-gel process. Advanced multiferroic properties, with a remnant polarization P-r of similar to 28 mu C/cm(2) and a saturated magnetization M-s of similar to 1.4 emu/cm(3), were observed in a sample. The scaling of the dynamic ferroelectric hysteresis as a function of the magnitude E-0 and the frequency f of an applied electrical field was investigated. The scaling relationship of the P-E loops was found to take the form < A > proportional to f(-0.19)E(0)(4.47) at low E-0 and < A > proportional to f(-0.05)E(0)(1.26) at high E-0. The exponents of the scaling that domain reversal in the BFTO thin films is insensitive to f at both low and high E-0. This indicates the extensive potential applications of BFTO thin films in multi-state storage.

Automated summary

In this study, Bi5FeTi3O15 (BFTO) thin films were successfully obtained using a sol-gel process, exhibiting advanced multiferroic properties. The scaling relationship of the dynamic ferroelectric hysteresis with the applied electrical field magnitude and frequency was investigated, with the findings indicating the potential applications of BFTO thin films in multi-state storage due to the insensitivity of domain reversal to both frequency and electrical field magnitude.