Journal
IET POWER ELECTRONICS
Volume 9, Issue 13, Pages 2492-2499Publisher
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/iet-pel.2015.0600
Keywords
doping profiles; semiconductor device models; semiconductor device breakdown; electric fields; wide band gap semiconductors; silicon compounds; MOSFET; silicon carbide trench MOSFET; metal-oxide-semiconductor field-effect transistors; UMOSFET; P+ floating island; FLI; gate trench; blocking state; breakdown voltage enhancement; two-dimensional simulations; doping concentration effects; length effects; position effects; BV breakdown enhancement; electric field distribution; specific on-resistance; gate oxide layer; Baliga figure of merit; gate-drain capacitance; switching performance; drift layer parameters; SiC
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Funding
- Natural Science Foundation of China [61274079, 61176070]
- China Scholarship Council [201308610056]
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The silicon carbide trench metal-oxide-semiconductor field-effect transistors (SiC UMOSFET) with P+ floating island (FLI) which shields the gate oxide at the bottom of the gate trench from the high electric field during the blocking state and enhances the breakdown voltage (BV), is presented in this study using two-dimensional simulations. The effects of doping concentration, length and position of FLI on BV, electric field distribution and specific on-resistance (R-on,R-sp) are studied, thereby providing particularly useful guidelines for the design of this new type of device when considering the breakdown of the gate oxide layer. For the suitable device design, the results indicate that BV and Baliga figure of merit are, respectively, increased by 150 and 439% compared with a conventional SiC UMOSFET. At the same time, the SiC FLI UMOSFET has smaller gate-drain capacitance and better switching performance compared with the conventional UMOSFET on the condition of the same drift layer parameters. FLI introduced have almost no influence on the recovery characteristics of body diode.
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