Journal
JOURNAL OF LIGHTWAVE TECHNOLOGY
Volume 40, Issue 9, Pages 2959-2964Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JLT.2022.3143169
Keywords
Nonlinear optical devices; optical waveguides; quantum Well; second harmonic generation; SOI technology
Funding
- Air Force Office of Scientific Research [FA9550-21-1-0347]
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We present a theoretical investigation of efficient second harmonic generation in the cubic lattice-matched N-doped Si/GsP multiple quantum well system integrated in a strip waveguide in the silicon-on-insulator platform. The results show a giant second-order nonlinear optical susceptibility and a maximum conversion efficiency, obtained by engineering the quantum well structure and optimizing the resonance conditions.
We present a theoretical investigation of efficient second harmonic generation in the cubic lattice-matched N-doped Si/GsP multiple quantum well system integrated in a strip waveguide in the silicon-on-insulator platform. A giant second-order nonlinear optical susceptibility is obtained in an asymmetric coupled quantum well (ACQW) stack by engineering the 1-2 and 1-3 inter-subband spacings for resonance at both a similar to 4 mu m pump wavelength and a similar to 2 mu m harmonic wavelength. Generation has been simulated as a function of the quantum well physical parameters, the infrared absorption losses, and the detuning from the double resonance condition. For TM pumps at 3.75 mu m and 4.24 mu m, a chi((2))(zzz) value ranging from 7.73 x 103 pm/V to 1.13 x 104 pm/V has been calculated and a maximum conversion efficiency ranging between 1.23%/W and 1.68%/W has been obtained, where the waveguide coherence length was 5.57 mu m and 6.16 mu m.
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