Automatic Detection of Basal Plane Dislocations in a 150-mm SiC Epitaxial Wafer by Photoluminescence Imaging and Template-matching Algorithm

In this study, an algorithm was constructed for the automatic detection of basal plane dislocations (BPDs) propagating in SiC epitaxial layers in photoluminescence images, and its performance was evaluated. The BPDs are the origin of the degradation of SiC bipolar devices caused by the expansion of stacking faults. The present automatic detection algorithm, based on the template-matching method, was confirmed to have high accuracy and precision, and we succeeded in visualizing the BPD density in 150-mm SiC epitaxial wafers. We confirmed that the template-matching method is applicable for the detection of crystalline defects with geometrically fixed shapes such as BPDs in SiC epitaxial layers.

Automated summary

An algorithm for automatically detecting basal plane dislocations in SiC epitaxial layers was constructed and evaluated in this study. Based on the template-matching method, the algorithm demonstrated high accuracy and precision, allowing for visualization of BPD density in 150-mm SiC epitaxial wafers. It was confirmed that the template-matching method is suitable for detecting crystalline defects with geometrically fixed shapes like BPDs in SiC epitaxial layers.