Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 51, Issue 3, Pages 1428-1435Publisher
SPRINGER
DOI: 10.1007/s11664-021-09414-5
Keywords
Quantum dot; semiconductor; nanocrystal; HgTe; infrared; detector
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Funding
- ARO [W911NF-18-1-0207]
- DARPA [140D6318C01001, 0101-18-SUOC-0002]
- University of Chicago Physical Sciences Division
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In this study, the potential detectivity limits of HgTe nanocrystal quantum dot photodetectors were examined using a microscopic detailed balance model. The results showed that even with fast nonradiative recombination, HgTe quantum dot solids can achieve detectivities close to those of Auger-limited HgCdTe crystals. Furthermore, it was found that by reducing nonradiative recombination, larger detectivity limits can be achieved compared to HgCdTe. These findings are important for the future advancement of infrared photodetection with nanocrystal quantum dots.
The potential detectivity limits of HgTe nanocrystal quantum dot photodetectors are examined using a microscopic detailed balance model of carrier generation and recombination. We find that even with the fast nonradiative recombination typical of present materials, HgTe quantum dot solids can support equilibrium detectivities which are close to those of Auger-limited HgCdTe crystals. It is further shown that if such nonradiative recombination can be reduced so that Auger-limited performance is achieved, the confluence of fast radiative and slow Auger recombination should enable large upper limits on achievable detectivities when compared to HgCdTe. These results are discussed in the context of future advances in infrared photodetection with nanocrystal quantum dots.
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