4.5 Article

Spectroscopic Investigations and Thermoelectric Properties of RF-Sputtered ITO Thin Films

Journal

JOURNAL OF ELECTRONIC MATERIALS
Volume 51, Issue 3, Pages 1401-1408

Publisher

SPRINGER
DOI: 10.1007/s11664-021-09416-3

Keywords

Indium tin oxide; RF sputtering; structural properties; optical properties; electrical properties; thermoelectric properties

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This study successfully synthesized indium tin oxide (ITO) thin films using the radio frequency (RF)-sputtering method on glass substrates at room temperature. The structural, optical, electrical, and thermoelectric properties of the prepared films were investigated. The results showed that the films had suitable structure and properties for various applications.
We have studied the structural, optical, electrical and thermoelectric properties of radio frequency (RF)-sputtered indium tin oxide (ITO) thin films, synthesized at room temperature on glass substrates. A target, containing 90 wt% of In2O3 and 10 wt% of SnO2, was used. The structure of ITO thin films was analyzed by x-ray diffraction (XRD) and x-ray reflectivity (XRR). Moreover, the electrical and optical properties were characterized by the four-point probe method and UV-Vis-NIR spectrometry, respectively. The effect of the RF power on the structural, optical, electrical, and thermoelectric properties showed that the prepared films are suitable as transparent conducting oxides in many applications.

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