Resistive Switching in CdTe/CdSe Core-Shell Quantum Dots Embedded Chitosan-Based Memory Devices

In this paper, we report on the resistive switching (RS) and conduction mechanisms in devices consisting of CdTe/CdSe core-shell quantum dots embedded chitosan composites active layer. Two devices with active layers sandwiched between (1) Al and Ag, and (2) ITO and Ag electrodes were studied. Both devices exhibited bipolar memory behavior with V-SET = +1.32 V and V-RESET = -0.92 V, for the Al-based device, while V-SET = +0.70 V and V-RESET = -0.82 V were observed for the ITO-based device, enabling both devices to be operated at low powers. However, the switching mechanisms of both devices were different, i.e., RS in Al device was attributed to conductive bridge mechanism, while space-charge-limited driven conduction filament attributed the switching mechanism of the ITO device. Additionally, the Al-based device showed long retention (>= 10(3)s) and a reasonable large (>= 10(3)) ON/OFF ratio. Additionally, for this device, we also observed sweeping cycle-induced reversal of voltage polarity of the V-SET and V-RESET. In contrast, we observed that increasing sweeping cycles resulted in an exponential decrease of the OFF-state resistance of the ITO-based device.

Automated summary

This study reports on the resistive switching and conduction mechanisms in devices consisting of CdTe/CdSe core-shell quantum dots embedded chitosan composites active layer. Both devices exhibited bipolar memory behavior, enabling them to be operated at low powers.