Structural, microstructural, and ferroelectric studies of polyvinylidene fluoride-hexafluoropropylene (PVDF-HFP) thin films in Ag/Cu/PVDF-HFP/Cu capacitor structures

In this article, the structural, microstructural, and ferroelectric characteristics of polyvinylidene fluoride-hexafluoropropylene (PVDF-HFP) thin films in Ag/Cu/PVDF-HFP/Cu capacitor structures have been investigated. The bottom interfaces glass or Cu/glass influence upon the PVDF-HFP thin-film crystal structure and microstructure have been evaluated using grazing incidence X-ray diffractometer and atomic force microscopy. Quasi-static current-voltage loops, the polarization versus electric field loops measured at varied applied frequencies (100 mHz-1 Hz) and electric field amplitudes (2.5-27.5 MV/m) are utilized to comprehend the ferroelectric characteristics of PVDF-HFP thin films. Furthermore, the observed linear dependency between coercive field and frequency is linked to the homogenous domain growth model proposed by Kolmogorov-Avrami-Ishibashi.

Automated summary

This article investigates the structural, microstructural, and ferroelectric characteristics of polyvinylidene fluoride-hexafluoropropylene (PVDF-HFP) thin films in Ag/Cu/PVDF-HFP/Cu capacitor structures. The influence of bottom interfaces, such as glass or Cu/glass, on the crystal structure and microstructure of PVDF-HFP thin films is evaluated using grazing incidence X-ray diffractometer and atomic force microscopy. Quasi-static current-voltage loops and polarization versus electric field loops are used to understand the ferroelectric characteristics of PVDF-HFP thin films, and a linear relationship between coercive field and frequency is observed, supporting the homogeneous domain growth model proposed by Kolmogorov-Avrami-Ishibashi.