Related references
Note: Only part of the references are listed.Surface passivation of germanium by atomic layer deposited Al2O3 nanolayers
Wilhelmus J. H. Berghuis et al.
JOURNAL OF MATERIALS RESEARCH (2021)
The negative fixed charge of atomic layer deposited aluminium oxide-a two-dimensional SiO2/AlO x interface effect
Daniel Hiller et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2021)
Direct-bandgap emission from hexagonal Ge and SiGe alloys
Elham M. T. Fadaly et al.
NATURE (2020)
Application of Quasi-Steady-State Photoconductance Technique to Lifetime Measurements on Crystalline Germanium Substrates
Isidro Martin et al.
IEEE JOURNAL OF PHOTOVOLTAICS (2020)
Silicon Waveguide Integrated with Germanium Photodetector for a Photonic-Integrated FBG Interrogator
Hongqiang Li et al.
NANOMATERIALS (2020)
The last silicon transistor: Nanosheet devices could be the final evolutionary step for Moore's Law
Peide Ye et al.
IEEE SPECTRUM (2019)
An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors
Martin Hauck et al.
COMMUNICATIONS PHYSICS (2019)
Effective passivation of silicon surfaces by ultrathin atomic-layer deposited niobium oxide
B. Macco et al.
APPLIED PHYSICS LETTERS (2018)
Passivating Contacts for Crystalline Silicon Solar Cells: From Concepts and Materials to Prospects
Jimmy Melskens et al.
IEEE JOURNAL OF PHOTOVOLTAICS (2018)
Explorative studies of novel silicon surface passivation materials: Considerations and lessons learned
L. E. Black et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2018)
Ultralow Surface Recombination Velocity in Passivated InGaAs/InP Nanopillars
A. Higuera-Rodriguez et al.
NANO LETTERS (2017)
Dielectric surface passivation for silicon solar cells: A review
Ruy S. Bonilla et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2017)
Exceeding conversion efficiency of 26% by heterojunction interdigitated back contact solar cell with thin film Si technology
Kunta Yoshikawa et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2017)
Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26%
Kunta Yoshikawa et al.
NATURE ENERGY (2017)
Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide
Dirk Koenig et al.
SCIENTIFIC REPORTS (2017)
Reaction and Growth Mechanisms in Al2O3 deposited via Atomic Layer Deposition: Elucidating the Hydrogen Source
Carlos Guerra-Nunez et al.
CHEMISTRY OF MATERIALS (2017)
On the Control of the Fixed Charge Densities in Al2O3-Based Silicon Surface Passivation Schemes
Daniel K. Simon et al.
ACS APPLIED MATERIALS & INTERFACES (2015)
Interface Engineering and Gate Dielectric Engineering for High Performance Ge MOSFETs
Jiabao Sun et al.
ADVANCES IN CONDENSED MATTER PHYSICS (2015)
Excellent c-Si surface passivation by low-temperature atomic layer deposited titanium oxide
Baochen Liao et al.
APPLIED PHYSICS LETTERS (2014)
On effective surface recombination parameters
Keith R. McIntosh et al.
JOURNAL OF APPLIED PHYSICS (2014)
Deposition temperature dependence of material and Si surface passivation properties of O3-based atomic layer deposited Al2O3-based films and stacks
Stefan Bordihn et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2014)
GeO2 Passivation for Low Surface Recombination Velocity on Ge Surface
Yen-Yu Chen et al.
IEEE ELECTRON DEVICE LETTERS (2013)
Achieving direct band gap in germanium through integration of Sn alloying and external strain
Suyog Gupta et al.
JOURNAL OF APPLIED PHYSICS (2013)
Native point defects and dangling bonds in α-Al2O3
Minseok Choi et al.
JOURNAL OF APPLIED PHYSICS (2013)
Impact of plasma post oxidation temperature on interface trap density and roughness at GeOx/Ge interfaces
R. Zhang et al.
MICROELECTRONIC ENGINEERING (2013)
Hydrogenated microcrystalline silicon germanium as bottom sub-cell absorber for triple junction solar cell
Yu Cao et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2013)
Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
Gijs Dingemans et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2012)
Chemical and structural study of electrically passivating Al2O3/Si interfaces prepared by atomic layer deposition
Volker Naumann et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2012)
Improved quantitative description of Auger recombination in crystalline silicon
Armin Richter et al.
PHYSICAL REVIEW B (2012)
Germanium surface passivation and atomic layer deposition of high-k dielectrics-a tutorial review on Ge-based MOS capacitors
Qi Xie et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2012)
Metallic subwavelength-cavity semiconductor nanolasers
K. Ding et al.
LIGHT-SCIENCE & APPLICATIONS (2012)
Optimisation of Intrinsic a-Si:H Passivation Layers in Crystalline-amorphous Silicon Heterojunction Solar Cells
J. Ge et al.
INTERNATIONAL CONFERENCE ON MATERIALS FOR ADVANCED TECHNOLOGIES 2011, SYMPOSIUM O (2012)
Excellent crystalline silicon surface passivation by amorphous silicon irrespective of the technique used for chemical vapor deposition
Jan-Willem A. Schuttauf et al.
APPLIED PHYSICS LETTERS (2011)
High quality crystalline silicon surface passivation by combined intrinsic and n-type hydrogenated amorphous silicon
Jan-Willem A. Schuttauf et al.
APPLIED PHYSICS LETTERS (2011)
The Effect of Donor/Acceptor Nature of Interface Traps on Ge MOSFET Characteristics
Duygu Kuzum et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2011)
Near infrared image sensor with integrated germanium photodiodes
R. Kaufmann et al.
JOURNAL OF APPLIED PHYSICS (2011)
Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices
J. R. Weber et al.
JOURNAL OF APPLIED PHYSICS (2011)
Electronic and chemical properties of the c-Si/Al2O3 interface
Florian Werner et al.
JOURNAL OF APPLIED PHYSICS (2011)
Atomic Layer Deposition of High-kappa Dielectrics on Sulphur-Passivated Germanium
S. Sioncke et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2011)
H2S molecular beam passivation of Ge(001)
C. Merckling et al.
MICROELECTRONIC ENGINEERING (2011)
Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
G. Dingemans et al.
ELECTROCHEMICAL AND SOLID STATE LETTERS (2010)
Toward a Germanium Laser for Integrated Silicon Photonics
Xiaochen Sun et al.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2010)
Low-Temperature Formation of High-Quality GeO2 Interlayer for High-kappa Gate Dielectrics/Ge by Electron-Cyclotron-Resonance Plasma Techniques
Yukio Fukuda et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2010)
Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
G. Dingemans et al.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2010)
The Influence of the Epitaxial Growth Process Parameters on Layer Characteristics and Device Performance in Si-Passivated Ge pMOSFETs
Matty Caymax et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2009)
Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes
Xiaochen Sun et al.
OPTICS LETTERS (2009)
Cost-efficient thermophotovoltaic cells based on germanium substrates
J. van der Heide et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2009)
The effect of aluminum oxide incorporation on the material and electrical properties of hafnium oxide on Ge
Monica Sawkar-Mathur et al.
APPLIED PHYSICS LETTERS (2008)
Evidence of low interface trap density in GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation
Hiroshi Matsubara et al.
APPLIED PHYSICS LETTERS (2008)
On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3
B. Hoex et al.
JOURNAL OF APPLIED PHYSICS (2008)
Improving the performance of SiGe metal-semiconductor-metal photodetectors by using an amorphous silicon passivation layer
Y. H. Chen et al.
IEEE ELECTRON DEVICE LETTERS (2007)
Effects of sulfur passivation on germanium MOS capacitors with HfON gate dielectric
Ruilong Xie et al.
IEEE ELECTRON DEVICE LETTERS (2007)
Model for a-Si:H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds
Sara Olibet et al.
PHYSICAL REVIEW B (2007)
Fabrication of Ta2O5/GeNx gate insulator stack for Ge metal-insulator-semiconductor structures by electron-cyclotron-resonance plasma nitridation and sputtering deposition techniques
Yohei Otani et al.
APPLIED PHYSICS LETTERS (2007)
Role of germanium nitride interfacial layers in HfO2/germanium nitride/germanium metal-insulator-semiconductor structures
Tatsuro Maeda et al.
APPLIED PHYSICS LETTERS (2007)
Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
S. B. S. Heil et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2007)
Hafnium oxide gate dielectrics on sulfur-passivated germanium
Martin M. Frank et al.
APPLIED PHYSICS LETTERS (2006)
Electrical characterization of germanium oxide/germanium interface prepared by electron-cyclotron-resonance plasma irradiation
Y Fukuda et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2005)
Surface passivation for germanium photovoltaic cells
NE Posthuma et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2005)
Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-insulator substrates
B De Jaeger et al.
MICROELECTRONIC ENGINEERING (2005)
High dielectric constant oxides
J Robertson
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS (2004)
First-principles calculations of intrinsic defects in Al2O3 -: art. no. 085110
K Matsunaga et al.
PHYSICAL REVIEW B (2003)
Lift-out techniques coupled with advanced TEM characterization methods for electrical failure analysis
N Bicaïs-Lépinay et al.
MICROELECTRONICS RELIABILITY (2002)
Share Paper
