Spin transport in fully ferromagnetic p-n junctions

We systematically investigate the spin-dependent transport properties of fully ferromagnetic (Ga,Fe)Sb/GaSb/(In,Fe)Sb and (Ga,Fe)Sb/(In,Fe)As p-n junctions grown by low-temperature molecular beam epitaxy. The (Ga,Fe)Sb/GaSb/(In,Fe)Sb p-n junctions show high Curie temperature (170-310 K) and rectifying characteristics. The polarity and magnitude of magnetoresistance of the (Ga,Fe)Sb/GaSb/(In,Fe)Sb junctions strongly depend on the GaSb spacer thickness (t). Large positive magnetoresistance (MR, 58%) and negative MR (-1.6%) were observed at 3.7 K for the samples with t = 2 and 4 nm, respectively. When the n-type (In,Fe)Sb layer was replaced by the n-type (In,Fe)As, giant MR over 500% was observed, which can be explained by spin-valve and spin-splitting effects. Our results shed light on rich spin-transport physics observed in fully ferromagnetic p-n junctions.

Automated summary

In this study, the spin-dependent transport properties of fully ferromagnetic p-n junctions were systematically investigated, and the variation of magnetoresistance with the GaSb thickness was found. When the n-type (In,Fe)As layer was used in the structure, a giant magnetoresistance of over 500% was observed.