Related references
Note: Only part of the references are listed.Interfacial sharpness and intermixing in a Ge-SiGe multiple quantum well structure
A. Bashir et al.
JOURNAL OF APPLIED PHYSICS (2018)
Sb-incorporation in MBE-grown metamorphic InAsSb for long-wavelength infrared applications
Stephanie Tomasulo et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2018)
Low threading dislocation density GaAs growth on on-axis GaP/Si (001)
Daehwan Jung et al.
JOURNAL OF APPLIED PHYSICS (2017)
Dislocation migration across coherent phase interfaces in SiGe superlattices
Paula A. Pluchino et al.
COMPUTATIONAL MATERIALS SCIENCE (2016)
Threading and Near-Surface Dislocations in InGaSb/AlSb Films with Blocking and Anti-Blocking Layers
M. B. Katz et al.
JOURNAL OF ELECTRONIC MATERIALS (2016)
Critical thickness investigation of MBE-grown GaInAs/GaAs and GaAsSb/GaAs heterostructures
Aymeric Maros et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2016)
Materials genomics of thin film strain relaxation by misfit dislocations
R. Hull et al.
JOURNAL OF APPLIED PHYSICS (2015)
Defect Formation and Strain Relaxation in graded GaPAs/GaAs, GaNAs/GaAs and GaInNAs/Ge Buffer Systems for high-efficiency Solar Cells
J. Schoene et al.
18TH MICROSCOPY OF SEMICONDUCTING MATERIALS CONFERENCE (MSM XVIII) (2013)
Structural and luminescent properties of bulk InAsSb
W. L. Sarney et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2012)
Misfit dislocation blocking by dilute nitride intermediate layers
J. Schoene et al.
APPLIED PHYSICS LETTERS (2008)
Nanoscale mechanisms of misfit dislocation propagation in undulated Si1-xGex/Si(100) epitaxial thin films
Chi-Chin Wu et al.
NANOTECHNOLOGY (2007)
Elastic study on singularities interacting with interfaces using alternating technique Part I. Anisotropic trimaterial
ST Choi et al.
INTERNATIONAL JOURNAL OF SOLIDS AND STRUCTURES (2002)
Share Paper
