Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 884, Issue -, Pages -Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2021.161031
Keywords
BNT-BT; Sol-gel; Energy-storage; Thin film
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Funding
- NSFC-Guangdong Joint Funds of the Natural Science Foundation of China [U1601209]
- Major Program of the Natural Science Foundation of China [51790490]
- Natural Science Foundation of China [51872213]
- Foshan Xianhu Laboratory of the Advanced Energy Science and Technology Guangdong Laboratory
- Self-determined and innovative Research Funds of SKLWUT [2021-PY-4]
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In this study, Fe-doped 0.94BNT-0.06BT ferroelectric thin films were prepared and demonstrated improved dielectric and energy-storage performances. The 0.96BNT-0.04BT-Fe-2 thin film exhibited the best properties among the samples studied.
In this study, energy-storage and dielectric performances of x mol% (x = 0, 2, 4, 6) Fe-doped 0.94Bi(0.5)Na(0.5)TiO(3)-0.06BaTiO(3) (abbreviated as 0.94BNT-0.06BT-Fe-x) ferroelectric thin films were prepared through sol-gel process. Fe-doped BNT-BT thin films were found to have slimmer hysteresis with higher maximum polarization (Ps), lower remanent polarization (P-r), higher breakdown strength and much larger dielectric constant. Optimal energy-storage properties were obtained for 0.96BNT-0.04BT-Fe-2 thin films, with a breakdown strength, energy-storage density and efficiency of 2500 kV/cm, 33 J/cm(3), 67.8%, respectively. Simultaneously, the leakage mechanisms of the 0.96BNT-0.04BT-Fe(x Chi)were investigated, and influences of the oxygen vacancies on the leakage current as well as breakdown strength were discussed. The outstanding properties of our thin film indicate its usage in advanced high-energy-storage capacitors. (C) 2021 Elsevier B.V. All rights reserved.
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