4.7 Article

High doping efficiency Al-doped ZnO films prepared by co-injection spatial atomic layer deposition

Journal

JOURNAL OF ALLOYS AND COMPOUNDS
Volume 884, Issue -, Pages -

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2021.161025

Keywords

Al-doped zinc oxide; Atomic layer deposition; Doping efficiency; Resistivity; Transparent conductive oxide

Funding

  1. Scientific and technological project in Xiamen [3502ZCQ20191002]
  2. Scientific research projects of Xiamen University of Technology [405011904, 40199029, YKJ19001R, XPDKQ19006]
  3. Natural Science Foundation of Fujian Province [2020H0025]
  4. National Natural Science Foundation of China [61704142]

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Aluminum-doped ZnO films were prepared using spatial ALD technique, and the Al doping level was successfully predicted by controlling the ratio of TMA to DEZ vapor molecules. Films prepared under specific conditions showed good electrical properties with a high Al-doping efficiency of 73%.
Aluminum-doped ZnO (AZO) films are prepared by using spatial atomic layer deposition (ALD). The precursors of trimethylaluminum (TMA) and diethylzinc (DEZ) are concurrently introduced into the deposition region. The amount ratio of TMA to DEZ vapor molecules is controlled by varying the temperature of the precursor bubblers from 5 degrees to 77 degrees C. It is found that the Al doping level can be predicted using the amount ratio of TMA to DEZ output vapors. The film prepared at the bubbler temperature of 41 degrees C exhibits an Al content of similar to 1% and a low resistivity of 3.5 x 10(-4) Omega-cm comparable to indium tin oxide films. Furthermore, the Al-doping efficiency is as high as 73%. This study is useful in applying the ALD technique to films with multicomponent oxides. (c) 2021 Elsevier B.V. All rights reserved.

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