Enhanced solar-blind photoresponse characteristics in β-Ga2O3 epitaxial films on large miscut sapphire substrates

Realizing high performance solar-blind region photodetector are highly desired for the next-generation civil and military surveillance applications. As an attractive wide band gap semiconductor, fi-Ga2O3 with a suitable band gap show great potential as the ideal candidate for solar-blind detection without the need of bandgap engineering. Here, we found that the crystallinity and photoresponse properties of epitaxial fi-Ga2O3 films can be modified by selecting the substrate with different miscut angles. Especially, enhanced characteristics of responsivity and specific detectivity in fi-Ga2O3 thin films grown on sapphire substrate with 6 degrees miscut angle could reach 1.36 A/W and 5.6 & times; 1014 Jones at 5 V under 5 & micro;W/cm2 254 nm light, respectively, which are superior than those grown on other miscut angle substrates. The results demonstrate an effective strategy to develop future high performance solar-blind photodetectors. (c) 2021 Elsevier B.V. All rights reserved.

Automated summary

The crystallinity and photoresponse properties of epitaxial fi-Ga2O3 films can be modified by selecting the substrate with different miscut angles. Fi-Ga2O3 thin films grown on sapphire substrate with 6 degrees miscut angle show enhanced responsivity and specific detectivity, demonstrating an effective strategy to develop high performance solar-blind photodetectors in the future.