Related references
Note: Only part of the references are listed.Monolithic full-color microdisplay using patterned quantum dot photoresist on dual-wavelength LED epilayers
Peian Li et al.
JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY (2021)
1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current
Huaxing Jiang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)
Epitaxy N-polar GaN on vicinal Sapphire substrate by MOCVD
Yangfeng Li et al.
VACUUM (2021)
Growth and Characterization of Nitrogen-Polar AlGaN/AlN Heterostructure for High-Electron-Mobility Transistor
Tadatoshi Ito et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2020)
Growth of N-Polar Aluminum Nitride on Vicinal Sapphire Substrates and Aluminum Nitride Bulk Substrates
Tatsuya Isono et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2020)
Comparison of the AlN and GaN crystalline quality on 2-inch silicon substrate via two growth methods
Yangfeng Li et al.
JOURNAL OF CRYSTAL GROWTH (2020)
Effect of H2 treatment in barrier on interface, optical and electrical properties of InGaN light emitting diodes
Yangfeng Li et al.
SUPERLATTICES AND MICROSTRUCTURES (2020)
Characterization of edge dislocation density through X-ray diffraction rocking curves
Yangfeng Li et al.
JOURNAL OF CRYSTAL GROWTH (2020)
High quality N-polar GaN films grown with varied V/III ratios by metal-organic vapor phase epitaxy
Chengguo Li et al.
RSC ADVANCES (2020)
Characterization of periodicity fluctuations in InGaN/GaN MQWs by the kinematical simulation of X-ray diffraction
Yangfeng Li et al.
APPLIED PHYSICS EXPRESS (2019)
Enhancement of the optoelectronic performance of p-down multiquantum well N-GaN light-emitting diodes
Muhammad Usman et al.
PHYSICA SCRIPTA (2019)
Visualizing carrier transitions between localization states in a InGaN yellow-green light-emitting-diode structure
Yangfeng Li et al.
JOURNAL OF APPLIED PHYSICS (2019)
Abnormal Stranski-Krastanov Mode Growth of Green InGaN Quantum Dots: Morphology, Optical Properties, and Applications in Light-Emitting Devices
Lai Wang et al.
ACS APPLIED MATERIALS & INTERFACES (2019)
N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance
Onur S. Koksaldi et al.
IEEE ELECTRON DEVICE LETTERS (2018)
N-polar GaN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor formed on sapphire substrate with minimal step bunching
Kiattiwut Prasertsuk et al.
APPLIED PHYSICS EXPRESS (2018)
Impact of sapphire nitridation on formation of Al-polar inversion domains in N-polar AlN epitaxial layers
N. Stolyarchuk et al.
JOURNAL OF APPLIED PHYSICS (2017)
Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells
Yadan Zhu et al.
NANOSCALE RESEARCH LETTERS (2017)
Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells
Yadan Zhu et al.
NANOSCALE RESEARCH LETTERS (2017)
Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides
Isaac Bryan et al.
JOURNAL OF CRYSTAL GROWTH (2016)
Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si
Yi Sun et al.
NATURE PHOTONICS (2016)
Polarity Control in Group-III Nitrides beyond Pragmatism
Stefan Mohn et al.
PHYSICAL REVIEW APPLIED (2016)
Effect of III/V ratio on the polarity of AlN and GaN layers grown in the metal rich growth regime on Si(111) by plasma assisted molecular beam epitaxy
Manvi Agrawal et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2015)
Study of N-polar GaN growth with a high resistivity by metal-organic chemical vapor deposition
Junyan Jiang et al.
VACUUM (2015)
Realization of high-luminous-efficiency InGaN light-emitting diodes in the green gap range
Yang Jiang et al.
SCIENTIFIC REPORTS (2015)
Recent progress in metal-organic chemical vapor deposition of (000(1)over-bar) N-polar group-III nitrides
Stacia Keller et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2014)
Temperature-dependent photoluminescence in light-emitting diodes
Taiping Lu et al.
SCIENTIFIC REPORTS (2014)
N-polar GaN epitaxy and high electron mobility transistors
Man Hoi Wong et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2013)
Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes
F. Akyol et al.
APPLIED PHYSICS LETTERS (2012)
Effect of Internal Electric Field in Well Layer of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes on Efficiency Droop
Sang-Heon Han et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2012)
Pyramidal inversion domain boundaries revisited
T. Remmele et al.
APPLIED PHYSICS LETTERS (2011)
RF Performance of Deep-Recessed N-Polar GaN MIS-HEMTs Using a Selective Etch Technology Without Ex Situ Surface Passivation
Seshadri Kolluri et al.
IEEE ELECTRON DEVICE LETTERS (2011)
Impact of gallium supersaturation on the growth of N-polar GaN
Seiji Mita et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 (2011)
Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition
S. Mita et al.
JOURNAL OF APPLIED PHYSICS (2008)
Investigation of violet InGaN laser diodes with normal and reversed polarizations
Sheng-Horng Yen et al.
APPLIED PHYSICS LETTERS (2007)
Electrical characterization of p-type N-polar and Ga-polar GaN grown by metalorganic chemical vapor deposition
N. A. Fichtenbaum et al.
APPLIED PHYSICS LETTERS (2007)
Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition
S. Keller et al.
JOURNAL OF APPLIED PHYSICS (2007)
Polarity inversion of GaN(0001) surfaces induced by Si adsorption
AL Rosa et al.
SURFACE SCIENCE (2006)
Effects of film polarities on InN growth by molecular-beam epitaxy
K Xu et al.
APPLIED PHYSICS LETTERS (2003)
Atomic structure of pyramidal defects in Mg-doped GaN
P Vennegues et al.
PHYSICAL REVIEW B (2003)
Share Paper
