Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 893, Issue -, Pages -Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2021.162325
Keywords
WC-Co cemented carbide; Diamond coating; Conversion annealing; HFCVD; Adhesion
Categories
Funding
- Science and Technology Program of Guangzhou City [201902010018, 201807010091]
- Science and Technology Program of Guangdong Province [2015B090923006]
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By converting the surface layer of WC-Co cemented carbide into intermetallic and Co-rich compound phases through a novel conversion annealing pretreatment, the adhesion of diamond coating can be improved and a high-quality microscale diamond coating can be deposited onto the conversion layer.
To maintain the substrate strength and toughness of WC-Co cemented carbide as well as improve its adhesion with a diamond coating deposited by hot filament chemical vapor deposition (HFCVD), a novel conversion annealing pretreatment was studied. The pretreated substrates, as-nucleated, and as-grown diamond coating specimens were characterized using X-ray diffraction, scanning electron microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, and Rockwell hardness tests. It was found that conversion treatment could effectively convert the Co in the surface layer into intermetallic (Co3W, Co7W) and/or Co-rich compound (M6C, M12C) phases. The conversion layer underwent a re-carburization process during the nucleation stage of HFCVD. The intermetallic phases returned to the gamma-Co (W) phase which will be encapsulated by the freshly formed WC layer. This is beneficial for seeding growth and new diamond nuclei formation. However, those Co-rich carbides consumed much carbon atoms to decompose and react to form a lot of free gamma-Co phase during the nucleation stage, which promoted severe graphitization at the growth interface during HFCVD, and caused the film to peel off. A high-quality microscale diamond coating with an adhesion of the HF 2-3 level could be deposited onto the conversion layer with only the WC and Co3W phases. (C) 2021 Elsevier B.V. All rights reserved.
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