The analyzing of I-V performance of PbO2/n-Si heterojunction in the wide temperature range

In this study, lead oxide (PbO2) was used as interface material in Schottky diode applications. The morphological properties of PbO2 were analyzed by using Scanning Electron Microscopy (SEM). The n-Si crystal was used as the base material and PbO2 material was coated on the crystal with spin coating (1000 rpm for 3 min). Thus, reference diode and PbO2/n-Si heterojunctions were fabricated. The barrier height (Phi(b)) and ideality factor (n) values were calculated using room temperature current-voltage (I-V) characteristic of these diodes. These values were calculated as n = 1.24, Phi(b) = 0.84 for Ni/n-Si/Al diode and n = 1.91, Phi(b) = 0.77 for Ni/PbO2/n-Si/Al heterojunction. In addition, the n, Phi(b) and series resistance (R-s) values of the PbO2/n-Si diode were calculated for different temperature values (120-300 K). It was determined that the diode parameters were strongly dependent on the temperature. It was observed that the change in the Phi(b) and n values of the diode with temperature showed a double Gaussian distribution. Also, capacitance-voltage (C-V) measurements for different frequency values of PbO2/n-Si heterojunction were analyzed at the 300 K. It was observed that the diode capacitance decreased with the increasing frequency. (C) 2021 Elsevier B.V. All rights reserved.

Automated summary

In this study, lead oxide (PbO2) was used as an interface material in Schottky diode applications, and its morphological properties were analyzed. Reference diode and PbO2/n-Si heterojunctions were fabricated and the parameters were calculated. The experiment showed that the diode parameters were strongly temperature-dependent, and the diode capacitance decreased with increasing frequency.