Temperature-dependent Raman and photoluminescence of β-Ga2O3 doped with shallow donors and deep acceptors impurities

Ion doping technology with precise control of doping concentration and configuration can optimize the performance of beta-phase gallium oxide (beta-Ga2O3) high-power electronic and optoelectronic devices. In this work, shallow-donor Si and deep-acceptor Mg impurities are doped in beta-Ga2O3 separately using edge defined film-fed growth (EFG) method. Laser scanning confocal microscopy and X-ray diffraction analyses show that the as-grown un/Si/Mg-doped beta-Ga2O3 substrates have superior qualities such as smooth surface, homogenous phase, and high crystallinity. Raman spectroscopy analysis indicate that the Raman shift and full width at half-maximum (FWHM) has a linear relationship with temperature in the range of 77-297 K. The temperature-variable photoluminescence (PL) spectroscopy suggests that the Si doping introduces less damage to the beta-Ga2O3 lattice structure and the Si-doped sample has higher stability at different temperatures, however, the local atomic configurations of Mg impurities can be more easily/significantly affected by temperature. The work can offer an insightful reference to applications of ion-doped beta-Ga2O3 optoelectronic devices. (C) 2021 Elsevier B.V. All rights reserved.

Automated summary

Ion doping technology with precise control of doping concentration and configuration can optimize the performance of beta-phase gallium oxide (beta-Ga2O3) high-power electronic and optoelectronic devices. By separately doping shallow-donor Si and deep-acceptor Mg impurities in beta-Ga2O3 using the EFG method, the study found that the Si-doped sample has higher stability at different temperatures, while the local atomic configurations of Mg impurities can be more easily/significantly affected by temperature. The research provides valuable insights for the application of ion-doped beta-Ga2O3 optoelectronic devices.