High energy-storage all-inorganic Mn-doped Bi0.5 Na0.5TiO3-BiNi0.5Zr0.5O3 film capacitor with characteristics of flexibility and plasticity

As the vigorous development of modern emerging electronics in multi-field, capacitors with high energy-storage performance, superior mechanical flexibility and outstanding plasticity are urgently required to satisfy pluralistic applications. Herein, we obtain an all-inorganic flexible lead-free Mn-doped 0.4Bi(0.5)Na(0.5)TiO(3)-0.6BiNi(0.5)Zr(0.5)O(3) (BNT-BNZ) film capacitor with good plasticity fabricated on flexible Ni foil substrate via a conventional sol-gel method. The capacitor shows a desirable energy density (W-rec = 60.4 J/cm(3)) and high energy efficiency (eta = 63.2%) with excellent temperature stability (25-205 degrees C), frequency stability (500-5k Hz) and antifatigue property (1 x 10(8) cycles), due to its great insulation characteristic and relaxor features. Moreover, high energy-storage performance remains stable under various bending radii (r) and even after 10(4) bending cycles at r approximate to 3 mm. And no obvious deterioration of energy-storage capability in the capacitor is observed after long-term laying in the air (12 months) and another 10(4) bending cycles. Such outstanding results demonstrate that the flexible BNT-BNZ film capacitor based on Ni foil substrate has potential application in the future flexible electronics. More interestingly, the BNT-BNZ film capacitor exhibits wonderful plasticity, which can be folded or compressed into various shapes, and still maintain great properties under different folding states. It undoubtedly provides more possibilities for the design of capacitor, giving them additional freedom in terms of shape or space. This study not only develops a promising candidate for flexible energy-storage device, but also, more importantly, opens up new ideas and application fields for the design and development of flexible devices. (C) 2021 Elsevier B.V. All rights reserved.

Automated summary

In this study, a flexible lead-free Mn-doped 0.4Bi(0.5)Na(0.5)TiO(3)-0.6BiNi(0.5)Zr(0.5)O(3) (BNT-BNZ) film capacitor was successfully fabricated on a flexible Ni foil substrate, demonstrating excellent energy-storage performance, stability, and plasticity. The capacitor shows promising potential for future flexible electronics applications and provides new ideas for the design and development of flexible devices.